The MGFL45V1920A is a power field-effect transistor produced by Panasonic. It is suitable for 1.9-2.0GHz band power amplifier applications and has the characteristics of high output power, high power gain, high power added efficiency and low distortion.
The MGFL45V1920A is an internally impedance‑matched GaAs power FET designed for 1.9‑2.0 GHz band amplifiers. It offers 32 W typical output power, 13 dB linear gain, 45 % power‑added efficiency and low distortion, making it suitable for high‑performance RF applications.
Mitsubishi Electric emphasizes safety in circuit design, recommending proper placement of auxiliary circuits, use of non‑flammable materials, and adherence to bias conditions (VDS = 10 V, ID = 6.5 A, RG = 25 Ω). The datasheet includes absolute maximum ratings, electrical characteristics, and S‑parameter data.
| Frequency band | 1.9‑2.0 GHz |
|---|---|
| Linear power gain (GLP) | 13 dB (typ.) |
| Power‑added efficiency (PAE) | 45 % (typ.) |
| Drain current (ID) max | 22 A |
| Total power dissipation (PT) | 100 W |
| Gate‑to‑drain breakdown voltage (VGD0) | -15 V |
| Recommended VDS | 10 V |
Mitsubishi Electric recommends a drain‑source voltage of 10 V, drain current of 6.5 A, and source resistance of 25 Ω.
The absolute maximum drain current rating is 22 A.
The device has a typical power‑added efficiency of 45 %.