The MGFS45V2325A is an internally impedance-matched GaAs power FET especially designed for use in 2.3 – 2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFS45V2325A is a GaAs power FET designed for 2.3‑2.5 GHz band amplifiers. It features class‑A operation, internal 50 Ω matching, 32 W typical output power, 12 dB typical gain, and 45 % typical power‑added efficiency. Recommended bias conditions are VDS = 10 V, ID = 6.5 A, and RG = 25 Ω.
The device is supplied in a hermetically sealed metal‑ceramic package for high reliability. Mitsubishi Electric emphasizes safety in circuit design, noting the need for proper placement of auxiliary circuits, non‑flammable materials, and protection against malfunction. The datasheet includes absolute maximum ratings, electrical characteristics, and storage temperature limits.
| Frequency band | 2.3‑2.5 GHz |
|---|---|
| Typical output power | 32 W |
| Typical linear gain | 12 dB |
| Typical power‑added efficiency | 45 % |
| Maximum drain current | 22 A |
| Gate‑to‑drain breakdown voltage | -15 V |
| Total power dissipation | 100 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 32 W at 2.3‑2.5 GHz.
Recommended bias is VDS = 10 V, ID = 6.5 A, and RG = 25 Ω.
The maximum drain current is 22 A.
It can be stored from –65 °C up to +175 °C.