The MGFS45V2527A is a high power GaAs FET from Panasonic. It is internally impedance-matched and has a working frequency of 2.5-2.7GHz. The output power can reach 32W, the power gain is as high as 12dB, the rated power is 88W, and the storage temperature is -65℃ to 175℃.
The MGFS45V2527A is an internally impedance‑matched GaAs power FET designed for 2.5‑2.7 GHz band amplifiers. It is offered in a hermetically sealed metal‑ceramic package for high reliability and provides up to 32 W typical output power.
Key features include Class‑A operation, 50 Ω internal matching, high power gain (GLP≈12 dB), high power added efficiency (PAE≈45 %), and low distortion (IM3≈‑45 dBc). Recommended bias is VDS=10 V, ID=6.5 A, RG=25 Ω, with absolute maximum ratings such as VGDO=‑15 V, ID=22 A and total dissipation of 88 W.
| Frequency band | 2.5 – 2.7 GHz |
|---|---|
| Typical output power (P1dB) | 45 dBm |
| Linear Power Gain (GLP) | 12.0 dB (typ.) |
| Power Added Efficiency (PAE) | 45 % (typ.) |
| Gate‑to‑drain breakdown voltage (VGDO) | -15 V |
| Drain current (ID) max | 22 A |
| Total power dissipation (PT) | 88 W |
| Storage temperature range | -65 °C to +175 °C |
The recommended bias is VDS = 10 V, ID = 6.5 A with a source resistance of 25 Ω.
Typical output power at 1 dB compression is about 45 dBm (≈32 W).