MGFS45V2735 is a GaAs power FET specially designed for use in 2.7-3.5GHz band amplifiers. It features high output power, high gain and high power added efficiency.
The MGFS45V2735 is an internally impedance‑matched GaAs power FET designed for use in 2.7‑3.5 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and delivers up to 30 W of output power.
The sheet lists typical performance figures such as 12 dB linear gain, 36 % power‑added efficiency, and third‑order intermodulation of –45 dBc. Recommended bias conditions (VDS = 10 V, ID = 8 A, RG = 250 Ω) and absolute maximum ratings are provided, together with extensive safety notices and export‑control information.
| Frequency band | 2.7‑3.5 GHz |
|---|---|
| Typical output power (P1dB) | 30 W |
| Linear power gain (GLP) | 12 dB |
| Power‑added efficiency (PAE) | 36 % |
| Third‑order intermodulation (IM3) | -45 dBc |
| Recommended drain voltage | VDS = 10 V |
| Recommended drain current | ID = 8 A |
The typical output power is 30 W at frequencies between 2.7 GHz and 3.6 GHz.
The linear power gain is about 12 dB across the 2.7‑3.5 GHz band.
Recommended bias is VDS = 10 V, ID = 8 A, and gate resistance RG = 250 Ω.
It advises keeping safety first, using non‑flammable materials, proper placement of auxiliary circuits, and following export‑control regulations.