Fairchild FDB3502 N-Channel Power Trench MOSFET Datasheet

This PDF document is the datasheet of FDB3502 N-Channel Power Trench® MOSFET. Its features include Max rDS(on) = 47mΩ at VGS = 10V, ID = 6A, 100% UIL Tested, RoHS Compliant.

Brand: Fairchild
Category: Other Electronics
Document type: Datasheet
Language: English
Pages: 6
File format: PDF
File size: 354 KB
Published: 11 July, 2012
Updated: 30 September, 2023
MD5 checksum: D422C5A6612E64B47CAEC01BC0844E30
PDF: Fairchild FDB3502 N-Channel Power Trench MOSFET Datasheet PDF

About this manual

The document describes the Fairchild Semiconductor FDB3502, an N-Channel Power Trench® MOSFET designed for synchronous rectifier applications. It features a maximum on-state resistance of 47mΩ at Vgs = 10V and Id = 6A.

What's inside

General Description
Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Typical Characteristics
Package Marking

Specifications

On-Resistance (Typical)	47 mΩ

Frequently asked questions

What is the maximum continuous drain current for this MOSFET at a junction temperature of 25°C?

The device supports a continuous drain current of 14 A when the junction temperature is 25°C.

What is the maximum power dissipation rating for this MOSFET at a case temperature of 25°C?

The maximum power dissipation is rated at 41 W when the case temperature is 25°C.

What is the operating and storage junction temperature range for this component?

The device operates and stores within a junction temperature range of -55 to +150 °C.

Download PDF (354 KB)