Fairchild Semiconductor FDB8443 N-Channel PowerTrench MOSFET Datasheet

FDB8443 N-Channel PowerTrench® MOSFET is a 40V, 182A, 3.0mΩ power MOSFET with low Miller Charge, low Qrr Body Diode, UIS Capability (Single Pulse and Repetitive Pulse) features.


Fairchild Semiconductor FDB8443 N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
300 KB
Published
11 July, 2012
Updated
01 October, 2023
MD5 checksum
B4B56D4316CCD5C5514CB84C9D4D4770

About this manual

This document is a datasheet for the Fairchild Semiconductor FDB8443, an N-Channel PowerTrench MOSFET. The device is rated for 40V drain-to-source voltage, 182A continuous drain current, and 3.0mOhm on-resistance. It is designed for applications in power tools, automotive engine control, powertrain management, and solenoid or motor drivers.

What's inside

  • Features
  • Applications
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Switching Characteristics
  • Typical Characteristics

Specifications

Drain to Source Voltage40 V
Power Dissipation188 W
Operating Temperature Range-55 to +175 °C
Package TypeTO-263AB

Frequently asked questions

What is the single pulse avalanche energy rating for this MOSFET?

The FDB8443 can handle a single pulse avalanche energy of 531 mJ.

What is the maximum power dissipation rating at 25°C?

The maximum power dissipation for this component is rated at 188 W.

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