FDB390N15A N-Channel PowerTrench® MOSFET datasheet, the device has low RDS(on), fast switching speed, low gate charge, high performance trench technology, and can be used for DC to DC converters, synchronous rectifiers, etc.
This document is a technical datasheet for the Fairchild Semiconductor FDB390N15A, an N-Channel PowerTrench MOSFET. The device features a maximum drain-to-source voltage of 150V and a continuous drain current of 27A at 25°C. It utilizes advanced trench technology to minimize on-state resistance while maintaining superior switching performance.
| Drain to Source Voltage | 150 V |
|---|---|
| Continuous Drain Current (25°C) | 27 A |
| Power Dissipation (25°C) | 75 W |
| Operating Temperature Range | -55 to +175 °C |
The maximum power dissipation is 75 W when the case temperature is 25°C.
The device operates and can be stored in a temperature range from -55 to +175 °C.