This document describes the features and characteristics of FDB3682 / FDP3682 N-Channel PowerTrench® MOSFET, including its low on-resistance, low Miller charge, low QRR body diode, UIS capability, and applicable applications.
This document provides technical specifications and application information for the Fairchild FDB3682 (TO-263AB package) and FDP3682 (TO-220AB package), which are N-Channel PowerTrench MOSFETs rated at 100V, 32A continuous drain current, and 36mΩ on-resistance. The devices feature a low gate charge of 18.5nC typical and are qualified to AEC Q101 for automotive applications.
| Drain to Source Voltage (Voss) | 100 V |
|---|---|
| Gate to Source Voltage (Ves) | 42 V |
| Continuous Drain Current (Tj = 25°C) | 32 A |
| On-Resistance (RDS(ON)) Typical | 36 mΩ |
| Total Gate Charge (Qg) | 18.5 nC |
| Package Types | TO-263AB, TO-220AB |
Yes, the product is qualified to AEC Q101 standards.
The maximum power dissipation is 95 W.
The device operates and stores between -55°C and 175°C.