FDB3860 is a N-Channel MOSFET manufactured by Fairchild Semiconductor, with high performance trench technology and low RDSon characteristics, suitable for a wide range of switching applications.
This document is a preliminary datasheet for the Fairchild Semiconductor FDB3860 N-Channel PowerTrench MOSFET. The device utilizes advanced PowerTrench technology to achieve low on-resistance and low gate charge, making it suitable for a wide range of switching applications including DC-AC conversion and synchronous rectification.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current (Silicon limited) | 30 A |
| Pulsed Drain Current | 60 A |
| Max rDS(on) at VGS = 10 V | 37 mΩ |
| Power Dissipation (TC = 25 °C) | 71 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.75 °C/W |
| Package Type | TO-263AB |
The device supports a continuous drain current of 30 A at TC = 25 °C and 6.4 A at TA = 25 °C.
The FDB3860 has a rated Drain to Source Voltage of 100 V.
The Power Dissipation is rated at 3.1 W when TA = 25 °C.