This datasheet details the features and characteristics of the FDP8030L/FDB8030L N-Channel Logic Level PowerTrench® MOSFET.
The document describes the Fairchild FDP8030L/FDB8030L, an N-Channel Logic Level MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Key features include faster switching, lower gate charge, and a rugged internal source-drain diode that eliminates the need for an external Zener diode transient suppressor. The device is available in TO-220 and TO-263AB packages.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 80 A |
| Total Power Dissipation | 187 W |
| Maximum Junction Temperature | +175 °C |
| Thermal Resistance Junction-to-Case | 0.8 °CWV |
| Drain-Source Breakdown Voltage | 30 V |
| On-Resistance (Typical) | 3.5 mΩ |
The maximum junction temperature rating is 175°C.
The device is available in TO-220 and TO-263AB packages.