This document is about FDP6670AL/FDB6670AL N-Channel Logic Level PowerTrench MOSFET. The product is designed to improve the efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs have faster switching and lower gate charge compared to other MOSFETs with similar RDS(ON) specifications. This results in a MOSFET that is easier and safer to drive (even at high frequencies) and DC/DC power supply designs with higher overall efficiency. It is optimized for low gate charge, low RDS(ON), and fast switching speed.
The document describes the FDP6670AL and FDB6670AL as N-Channel Logic Level PowerTrench MOSFETs designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. These devices feature faster switching, lower gate charge, and are optimized for low on-resistance (Rds(on)) and fast switching speed.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Total Power Dissipation | 68 W @ Tc = 25°C |
| Operating Junction Temperature Range | -65 to +175 °C |
| Thermal Resistance (Junction-to-Case) | 2.2 °C/W |
| Input Capacitance (Ciss) | 2440 pF |
| Turn-On Delay Time (td(on)) | 13 - 23 ns |
The device has a maximum junction temperature rating of 175°C.
Yes, they are designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.