FDB44N25 is a 250V N-Channel MOSFET produced by Fairchild, with a rated current of 44A, 0.069Ω RDS(on), low gate charge and Crss, fast switching, 100% avalanche testing, and improved dv/dt capability.
This document is a datasheet for the Fairchild Semiconductor FDB44N25, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The FDB44N25 is rated for 250V drain-source voltage and 44A continuous drain current at 25°C. It features a low static drain-source on-resistance of 0.069 Ω, low gate charge, and fast switching capabilities. The datasheet includes absolute maximum ratings, electrical characteristics, typical performance curves, test circuit diagrams, and mechanical dimensions for the D2-PAK package.
| Drain-Source Voltage (VDSS) | 250 V |
|---|---|
| Static Drain-Source On-Resistance (RDS(on)) | 0.069 Ω @ VGS=10V, ID=22A |
| Total Gate Charge (Qg) | Typical 47 nC |
| Reverse Transfer Capacitance (Crss) | Typical 60 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case (RθJC) | Max 0.41 °C/W |
| Package Type | D2-PAK |
The maximum drain-source voltage (VDSS) is 250 V.
The FDB44N25 is available in a D2-PAK package.