This document describes the features and characteristics of the FDB5800 N-Channel Logic Level PowerTrench® MOSFET. The product features include low Rdson, low gate charge, high power and current handling capability, etc. It is suitable for applications such as motor/body load control, ABS systems, power train management, injection systems, DC-DC converters, and off-line UPS.
This document is a technical datasheet for the Fairchild Semiconductor FDB5800, an N-Channel Logic Level PowerTrench® MOSFET. The device features a typical on-resistance of 5.5mΩ at VGS = 5V and ID = 80A, designed for high performance in automotive applications.
| Drain to Source Voltage (VDSS) | 60 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| On-Resistance (rDS(ON)) Typical | 5.5 mΩ |
| Operating Temperature Range | -55 to 175°C |
Yes, it is qualified to AEC Q101 standards.
Applications include Motor/Body Load Control, ABS Systems, Power Train Management, Injection Systems, and DC-DC Converters.
Yes, the product is stated to be RoHS Compliant.