This document describes the features and characteristics of the FDB28N30 N-Channel MOSFET, including low on-state resistance, low gate charge, fast switching speed, 100% avalanche tested, and improved dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FDB28N30, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary UniFET™ technology to minimize on-state resistance and provide superior switching performance.
Key specifications include a maximum drain-to-source voltage of 300V, a continuous drain current of 28A at 25°C, and a low static drain-to-source on-resistance typical value of 0.129Ω. The datasheet provides detailed electrical characteristics, thermal data, and mechanical dimensions for the D2-PAK package.
| Drain to Source Voltage (V_DSS) | 300 V |
|---|---|
| Continuous Drain Current (I_D) | 28 A |
| Static Drain to Source On Resistance (R_DS(on)) | 0.129 Ω |
| Total Gate Charge (Q_g) | 39 nC |
| Package Type | D2-PAK |
The device operates and stores between -55°C and +150°C.
Yes, the datasheet states that the product is RoHS compliant.