FDB2614 is a 200V N-channel power Trench MOSFET, produced using Fairchild Semiconductor's advanced PowerTrench process that has been specially tailored to minimize on-state resistance while still maintaining superior switching performance.
This document is a technical datasheet for the Fairchild Semiconductor FDB2614, an N-Channel PowerTrench MOSFET. The device utilizes advanced manufacturing processes to minimize on-state resistance while maintaining superior switching performance, making it suitable for PDP (Plasma Display Panel) applications.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings such as a drain-source voltage of 200V and a continuous drain current of 62A at 25°C. It also details thermal resistance values, capacitance parameters, switching times, and package dimensions for the D2-PAK form factor.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 62 A |
| Package Type | D2-PAK |
The thermal resistance from junction to case is 0.48 °C/W.