This document describes the features and characteristics of the FDB2710 250V N-Channel PowerTrench MOSFET, which is produced using Fairchild Semiconductor's advanced PowerTrench process to minimize on-state resistance and maintain superior switching performance.
The document describes the Fairchild Semiconductor FDB2710, an N-Channel MOSFET produced using the PowerTrench process. Key features include fast switching speed, low gate charge, and high performance trench technology for extremely low on-state resistance. It is specifically tailored for PDP (Plasma Display Panel) applications.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 50 A |
| Static Drain-Source On-Resistance | 36.3 mQ |
| Operating and Storage Temperature Range | -55 to +150 °c |
| Package Type | D2-Pak |