FDD3510H is a dual N and P-channel enhancement mode Power MOSFETs produced by Fairchild Semiconductor using the company's advanced PowerTrench® process, which has been specially tailored to minimize on-state resistance and yet maintain superior switching performance.
The document is a technical datasheet for the Fairchild Semiconductor FDD3510H, which integrates an N-Channel and a P-Channel enhancement mode PowerTrench MOSFET into a single Dual DPAK package. The device utilizes an advanced process designed to minimize on-state resistance while maintaining superior switching performance.
| Drain Current Pulsed (N-Channel) | 20 A |
|---|---|
| Package Type | TO-252-4L Dual DPAK |
The maximum continuous drain current for the N-Channel device (Q1) is 4.3 A when the temperature is 25°C.
The device can operate or be stored within a junction temperature range of -55 to +150 °C.
The thermal resistance from junction to case for single operation of Q1 is 3.5 °C/W.