FDD306P P-Channel 1.8V Specified PowerTrench ® MOSFET is a high performance low voltage power transistor with extremely low ON-resistance (R DS(ON) = 28 m Ω @ V GS = –4.5 V), optimized for battery power management.
This document is a datasheet for the Fairchild Semiconductor FDD306P, a P-Channel MOSFET specified for 1.8V operation. It utilizes the PowerTrench process and is optimized for battery power management applications such as DC/DC converters. The device features a continuous drain current of -6.7A and a drain-source breakdown voltage of -12V.
| Drain-Source Voltage | -12 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Operating Junction Temperature | -55 to +175 °C |
| Turn-Off Fall Time | 41 to 65 ns |
The maximum continuous drain current is -6.7 A.
The operating and storage junction temperature range is -55 to +175 °C.