This document describes the features and characteristics of the FDD3672 N-Channel UltraFET® Trench MOSFET, including rated voltage, current, on-resistance, total gate charge, etc.
This document is a datasheet for the Fairchild FDD3672, an N-Channel UltraFET Trench MOSFET designed for applications such as DC/DC converters, off-line UPS, and synchronous rectifiers. The device operates at 100V with a typical on-resistance of 28mΩ and a total gate charge of 24nC.
The datasheet provides comprehensive electrical characteristics, including maximum ratings, off and on characteristics, and dynamic parameters. It also details thermal characteristics, reliability data, and typical performance curves for power dissipation, current capability, and switching times.
| Drain to Source Voltage | 100 V |
|---|---|
| Continuous Drain Current | 44 A |
| Total Gate Charge | 24nC |
| Package Type | TO-252AA |
| Operating Temperature | -55 to 175 °C |
The maximum power dissipation is 135 W.
Yes, the device has UIS capability for both single pulse and repetitive pulse conditions.