This page provides manuals, user guides, handbooks, specifications, and maintenance instructions for Industrial. View online or download for free. Showing page 1871.
The FDS6699S is a 30V N-channel power transistor from Fairchild Semiconductor. It features extremely low R DS(ON) and fast switching speed, and can be used in synchronous DC/DC power supplies.
The FDS6875 is a dual P-channel 2.5V specified PowerTrenchTM MOSFET from Fairchild Semiconductor that features extremely low RDS(ON) and low gate charge, making it well suited for portable electronics applications such as load switching and power management, battery charging and protection circuits.
FDS6890A is a dual N-channel 2.5V specified MOSFET manufactured by Fairchild Semiconductor. It uses the PowerTrench process and has extremely low RDS(ON) and low gate charge, which enables fast switching speed and high power and current handling capability.
This document describes the FDS6892A dual-channel N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor. These MOSFETs are made using the advanced PowerTrench process to minimize on-state resistance and maintain superior switching performance. They are well suited for low voltage and battery-powered applications that require low in-line power loss and fast switching.
The FDS6894AZ is a logic level N-channel power MOSFET from Fairchild Semiconductor that is produced using the company's advanced PowerTrench process. The product features very low RDS(ON) and superior switching performance, making it ideal for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6898A is a dual N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, low gate charge, high performance trench technology and high power and current handling capability.
The FDS6898AZ is a dual N-channel logic level PWM optimized PowerTrench MOSFET manufactured by Fairchild Semiconductor Corporation. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDS6900AS is a dual N-channel PowerTrench SyncFET from Fairchild Semiconductor. It features a high power conversion efficiency and is suitable for use in DC:DC power supplies for notebooks and other battery powered electronic devices.
FDS6910 is a dual N-channel logic level PowerTrench MOSFET produced by Fairchild Semiconductor using an advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This document describes the features and characteristics of the FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET produced by Fairchild Semiconductor. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The FDS6912 is a dual N-channel logic level PWM optimized PowerTrench MOSFET featuring faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
FDS6930A is a Fairchild Semiconductor N-Channel Logic Level MOSFET produced using the PowerTrench process, which has low on-resistance and superior switching performance. The device is suitable for low-voltage and battery-powered applications where low line loss and fast switching are required.
The FDS6930B is a dual N-channel logic level power MOSFET with a rating of 5.5A, 30V. It features fast switching speed, low gate charge, and high performance trench technology.
