This document describes the FDS6892A dual-channel N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor. These MOSFETs are made using the advanced PowerTrench process to minimize on-state resistance and maintain superior switching performance. They are well suited for low voltage and battery-powered applications that require low in-line power loss and fast switching.
The FDS6892A is a dual N-channel logic level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance, making it well-suited for low voltage and battery-powered applications.
Key features include a 75A current rating, low gate charge of 12 nC, and high power handling capability. The device operates with a drain-source voltage of 20V and a maximum junction temperature range of -55°C to +150°C.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | -12 V |
| Pulsed Drain Current | 30 A |
| Power Dissipation (Dual) | 2 W |
| Operating Junction Temperature | -55 to +150 °C |
| Gate Charge | 12 nC |
| On-Resistance (Typical) | 18 mΩ |
The maximum drain-source voltage is 20 V.
The operating and storage junction temperature range is -55 to +150 °C.