The FDS6875 is a dual P-channel 2.5V specified PowerTrenchTM MOSFET from Fairchild Semiconductor that features extremely low RDS(ON) and low gate charge, making it well suited for portable electronics applications such as load switching and power management, battery charging and protection circuits.
This document is a technical datasheet for the Fairchild Semiconductor FDS6875, a Dual P-Channel 2.5V Specified PowerTrench™ MOSFET. The device utilizes advanced trench technology to minimize on-state resistance while maintaining low gate charge for superior switching performance.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings such as a drain-source voltage of -20 V and continuous drain current of 6 A. It also details thermal characteristics, capacitance values, and typical operating curves for various conditions.
| Drain-Source Voltage (V_DSS) | -20 V |
|---|---|
| Gate-Source Voltage (V_GSS) | +8 V |
| Power Dissipation (Dual Operation) | 2 W |
| Operating Temperature Range | -55 to 150 °C |
| Total Gate Charge (Q_g) | 23 nC typical |
The device is well suited for load switching, power management, battery charging, and protection circuits.
The maximum continuous drain current is 6 A.