FDS6898A is a dual N-channel logic level PWM optimized PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It features low on-state resistance, low gate charge, high performance trench technology and high power and current handling capability.
This document is a technical datasheet for the Fairchild Semiconductor FDS6898A, a Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET. The device utilizes advanced PowerTrench process technology to minimize on-state resistance while maintaining superior switching performance.
Key specifications include a drain-source voltage rating of 20V and a continuous drain current of 9.4A for dual operation. The datasheet provides detailed electrical characteristics, thermal data, typical performance curves, and maximum safe operating area information.
| Drain-Source Voltage (V_DSS) | 20 V |
|---|---|
| Gate-Source Voltage (V_GSS) | -12 to +12 V |
| Pulsed Drain Current | 38 A |
| Power Dissipation (Dual Operation) | 2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 9.4 A.
The maximum drain-source voltage is 20 V.
The operating and storage junction temperature range is -55 to +150 °C.