Industrial

FDS6961A is a N-Channel Logic Level MOSFET produced by Fairchild Semiconductor, which features low on-state resistance, high performance and fast switching, suitable for low voltage and battery powered applications

FDS6975 is a dual P-channel logic level MOSFET produced by Fairchild Semiconductor. It is made using the advanced PowerTrench process, which has extremely low on-state resistance and low gate charge, making it ideal for notebook computer applications such as load switching and power management, battery charging circuits, and DC/DC conversion.

This document is the owner's manual for HOME CINEMA CINEVERSUM SYSTEM R9010090, describing the features and characteristics of the Cine VERSUM 120 01102003 R5976667/00 model.

The FDS6982AS is a device designed to replace two single SO-8 MOSFETs and a Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery-powered electronic devices. It contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses, while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.

The FDS6986AS is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6986AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low- side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

The FDS6990AS is a dual N-channel power MOSFET from Fairchild Semiconductor. It has a maximum current of 7.5A, a maximum voltage of 30V, a typical on-resistance of 22mOhm, and a typical gate capacitance of 10nC. It is suitable for applications such as DC/DC converters and motor drives.

FDS6994S is a dual channel synchronous DC/DC power supply chip that uses N-channel PowerTrench MOSFETs and integrates Schottky diodes. It has the characteristics of low on-resistance and low switching loss.

This document describes the features and characteristics of the FDS8433A P-Channel MOSFET, including low on-state resistance, fast switching speed, high density cell design, and high power handling capability.

The FDS8447 is a single N-channel power trench MOSFET produced by Fairchild Semiconductor Corporation. It uses the advanced PowerTrench® process, which has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. It is suitable for DC-DC conversion applications.

This document introduces the FDS8449 40V N-Channel PowerTrench® MOSFET product released by Fairchild Semiconductor Corporation in December 2005. The product is produced using Fairchild's advanced PowerTrench process, which minimizes on-state resistance and maintains superior switching performance. It is mainly used in inverters and power supplies.

FDS86140 N-Channel PowerTrench® MOSFET is a high performance N-channel MOSFET with extremely low on-resistance and high power and current handling capability. It is manufactured using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

The FDS86141 is a N-channel PowerTrench® MOSFET with a maximum RDS(on) of 23 m, a maximum rated voltage of 100 V, and a maximum current of 7 A. The product is produced using Fairchild Semiconductor's advanced PowerTrench® process and offers ultra-low RDS(on) and superior switching performance.