The FDS6699S is a 30V N-channel power transistor from Fairchild Semiconductor. It features extremely low R DS(ON) and fast switching speed, and can be used in synchronous DC/DC power supplies.
The FDS66998 is a 30V N-Channel MOSFET designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC/DC power supplies. It utilizes Fairchild's monolithic SyncFET technology to integrate a Schottky body diode, maximizing power conversion efficiency with low on-resistance and low gate charge. The device is intended for applications such as synchronous rectifiers in DC/DC converters, notebook Vcore low side switches, and point of load low side switches.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Drain Current (Pulsed) | 105 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Static Drain-Source On-Resistance | 3.0 to 3.6 mΩ |
| Input Capacitance | 3610 pF |
| Output Capacitance | 1050 pF |
| Reverse Transfer Capacitance | 340 pF |
| Gate Resistance | 0.4 to 18 Ω |
| Turn-On Delay Time | 11 to 20 ns |
| Turn-On Rise Time | 12 to 22 ns |
| Turn-Off Delay Time | 73 to 117 ns |
| Turn-Off Fall Time | 38 to 61 ns |
| Total Gate Charge (Vgs=10V) | 65 to 91 nC |
| Total Gate Charge (Vgs=5V) | 35 to 49 nC |
| Diode Reverse Recovery Time | 32 ns |
It uses Fairchild's monolithic SyncFET technology which includes an integrated Schottky diode.
The operating and storage junction temperature range is from -55 to +150 °C.