Industrial

The FDS8882 N-Channel PowerTrench® MOSFET is a high-performance device with extremely low rDS(on) and fast switching characteristics. It is designed for power conversion applications and minimizes losses.

This document describes the features and characteristics of the FDS8884 N-Channel PowerTrench MOSFET. It has been specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It is optimized for low gate charge, low rDS(on), and fast switching speed.

FDS8896 N-Channel PowerTrench® MOSFET 30V, 15A, 6.0mΩ is a low-resistance MOSFET manufactured by Fairchild Semiconductor and is suitable for DC/DC converters.

The FDS89141 is a dual N-channel power transistor produced by Fairchild Semiconductor Corporation. It has a maximum on-resistance of 62 mΩ and a maximum current of 3.5 A. The device uses Fairchild Semiconductor's advanced Power Trench® process, which provides extremely low on-resistance, high power and current handling capability, and is widely used in synchronous rectifier and bridge topology applications.

FDS89161 is a dual N-channel PowerTrench® MOSFET from Fairchild Semiconductor that has extremely low RDS(on), high power and current handling capability, and is suitable for use in synchronous rectifiers and primary switches for bridge topologies.

FDS89161LZ is a dual N-channel PowerTrench® MOSFET produced by Fairchild Semiconductor. It has extremely low on-state resistance (rDS(on)) and can be used in DC-DC conversion circuits.

The product is a Schottky diode array, mainly used for ESD protection of high-speed data line interface. The product has the characteristics of low voltage drop, fast switching, PN junction guard ring and so on.

This document describes the features and characteristics of the FDS8928A dual N and P-channel enhancement mode field effect transistor produced in July 1998. These transistors are made using Fairchild's proprietary high cell density DMOS technology, which offers low on-state resistance, superior switching performance, and resistance to transients. They are particularly suitable for low voltage applications, such as notebook computer power management and battery powered circuits.

This document describes the features and characteristics of the FDS8935 Dual P-Channel PowerTrench® MOSFET, including maximum on-resistance, high-performance trench technology, high power and current handling capability. It is suitable for load switch and synchronous rectifier applications.

NUP4301MR6T1 is a low capacitance diode array for ESD protection in four data lines. It is designed to protect sensitive components from possible harmful electrical transients, for example, ESD (electrostatic discharge).

The FDS8949 is a dual N-channel logic level PowerTrench® MOSFET produced by Fairchild Semiconductor. It features extremely low on-state resistance and excellent switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

This document describes the FDS8958B Dual N & P-Channel PowerTrench® MOSFET released in December 2008. The product is well suited for low voltage and battery powered applications, featuring low on-state resistance and fast switching performance.

This document introduces dual N and P-channel enhancement mode power field effect transistors produced by Fairchild Semiconductor. These transistors are made using the advanced PowerTrench process, which minimizes on-state resistance and maintains superior switching performance. They are suitable for low voltage and battery powered applications that require low in-line power loss and fast switching.

FDS8978 is a N-channel MOSFET produced by Fairchild Semiconductor Corporation. Its maximum voltage is 30V, maximum current is 7.5A, and minimum on-resistance is 18mΩ. The device uses high-performance trench technology, with extremely low on-resistance, low gate charge, high power and current handling capability. It is suitable for DC/DC converters and other applications.

The NUP4201MR6 is a low capacitance, low power TVS diode that is designed to protect high speed data lines from ESD, EFT, and lighting. It features a 3pF maximum capacitance between I/O lines and is certified to IEC 61000-4-2, IEC 61000-4-4, IEC 61000-4-5, and other international standards.