The FDS6692A is an N-Channel PowerTrench® MOSFET power field-effect transistor, featuring low RDS(ON), low gate charge, and fast switching speed.
This document is a technical datasheet for the Fairchild Semiconductor FDS6692A, an N-Channel PowerTrench MOSFET. The device features high performance trench technology optimized for low gate charge and fast switching speed, making it suitable for improving efficiency in DC/DC converters using synchronous or conventional switching PWM controllers.
| Drain to Source Voltage | 30 V |
|---|---|
| Power Dissipation | 1.47 W |
| Operating and Storage Temperature | -55 to 150 °C |
| Package Type | SO-8 |
It is designed for DC/DC converters using either synchronous or conventional switching PWM controllers.
Yes, the datasheet lists RoHS Compliant as a feature of the device.