Industrial

The FDS4410 is a single N-channel logic level PWM optimized PowerTrench™ MOSFET with 10A continuous drain current and 30V drain-source voltage. It is optimized for use in switching DC/DC converters with PWM controllers, and features very fast switching and low gate charge, resulting in higher overall efficiency.

This document introduces the FDS4435 P-Channel MOSFET product from Fairchild Semiconductor. The product features the PowerTrench process, with low RDS(ON), low gate charge, and fast switching speed. It is suitable for power management, load switch, and battery protection applications.

FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

This document describes the Fairchild Semiconductor Corporation's FDS4470 40V N-Channel PowerTrench® MOSFET, released in December 2006. The product is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON), and fast switching speed.

The FDS4480 is a 40V N-Channel MOSFET with a low RDS(ON) of 12 mΩ and gate charge of 29 nC, making it suitable for DC/DC converter applications.

This is a document about the FDS4488 30V N-Channel PowerTrench MOSFET. The product is manufactured using Fairchild Semiconductor's advanced PowerTrench process, which aims to minimize on-state resistance while maintaining superior switching performance. It is suitable for low voltage and battery-powered applications that require low in-line power loss and fast switching.

This document introduces the FDS4501H Complementary PowerTrench Half-Bridge MOSFET produced by Fairchild Semiconductor Corporation in May 2001. This product utilizes Fairchild's advanced PowerTrench process to minimize on-state resistance and maintain low gate charge for superior switching performance. It is suitable for applications such as DC/DC converters, power management, load switches, and battery protection.

FDS4559 is a MOSFET device produced by Fairchild Semiconductor Corporation using PowerTrench process. It features low on-state resistance and low gate charge, and is suitable for applications such as DC/DC converters, power management and LCD backlight inverters.

This document describes the FDS4672A model N-Channel PowerTrench MOSFET, which has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers by optimizing low gate charge, low RDS(ON), and fast switching speed.

FDS4675 is a P-channel MOSFET with a maximum drain-source voltage of 40V and a maximum drain current of -11A. It is characterized by its fast switching speed and extremely low RDS(ON), making it suitable for power management, load switching, and battery protection applications.

This document describes the features and characteristics of Fairchild Semiconductor's FDS4685 40V P-Channel PowerTrench® MOSFET, including high-performance trench technology, fast switching speed, and high power and current handling capability. The product is suitable for power management, load switch, and battery protection applications.

This document describes the features and characteristics of the FDS4897AC Dual N & P-Channel PowerTrench® MOSFET product released in October 2008.

This document describes the features and characteristics of the dual N- and P-Channel enhancement mode power field effect transistors produced by Fairchild Semiconductor. These transistors are made using the PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance. They are suitable for applications such as inverters and power supplies.

This document introduces Fairchild Semiconductor's FDS4935A Dual 30V P-Channel PowerTrench MOSFET. It is based on the advanced PowerTrench process and is suitable for power management applications requiring a wide range of gate drive voltage ratings (4.5V-20V). It features low on-resistance, low gate charge, fast switching speed, and high power and current handling capability.