The FDS6894AZ is a logic level N-channel power MOSFET from Fairchild Semiconductor that is produced using the company's advanced PowerTrench process. The product features very low RDS(ON) and superior switching performance, making it ideal for low voltage and battery powered applications where low in-line power loss and fast switching are required.
The document describes the Fairchild Semiconductor FDS6894AZ, a dual N-Channel Logic Level MOSFET produced using the PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance for low voltage and battery-powered applications.
Key specifications include an 8A continuous drain current, a 20V drain-source breakdown voltage, and a typical gate charge of 14 nC. The device operates within a junction temperature range of -55°C to +150°C.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Power Dissipation (Dual) | 2 W |
| Operating Temperature Range | -55 to +150 °C |
| Total Gate Charge (Typ) | 14 nC |
The device supports a maximum continuous drain current of 8 A.
The maximum power dissipation for dual operation is 2 W.
The typical gate charge is 14 nC.