FDS6900AS is a dual N-channel PowerTrench SyncFET from Fairchild Semiconductor. It features a high power conversion efficiency and is suitable for use in DC:DC power supplies for notebooks and other battery powered electronic devices.
The FDS6900AS is a dual N-channel, logic level, PowerTrench MOSFET designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies for notebook computers and other battery-powered electronic devices. It contains two unique 30V, N-channel MOSFETs optimized to maximize power conversion efficiency, with the high-side switch (Q1) designed to reduce switching losses and the low-side switch (Q2) optimized to reduce conduction losses.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Continuous Drain Current (Q2) | 8.2 A |
| Continuous Drain Current (Q1) | 6.9 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 78 °C/W |
| Package Type | SO-8 |
The maximum continuous drain current for Q2 is 8.2 A.
The power dissipation for dual operation is 2 W.
The operating and storage junction temperature range is -55 to +150 °C.