Industrial

The FDS86240 N-Channel PowerTrench® MOSFET is a high-performance MOSFET with a maximum resistance of 19.8 mΩ, a working voltage of 150 V, and a maximum current of 7.5 A

This document describes the features and characteristics of the FDS86242 N-Channel PowerTrench MOSFET, including maximum on-resistance, high-performance trench technology, high power and current handling capability, etc.

FDS86252 is an N-Channel Power Trench® MOSFET with a maximum on-state resistance of 55mΩ and a maximum drain current of 4.5A. It utilizes high-performance trench technology for extremely low on-state resistance and high power and current handling capability. It is widely used in DC-DC conversion MOSFET applications.

The FDS8638 N-Channel PowerTrench® MOSFET is a high-performance N-channel MOSFET with extremely low on-state resistance. It has a maximum drain-source voltage of 40 V and a maximum drain-source current of 18 A. The maximum switching loss is 2.5 W. This device is manufactured using Fairchild Semiconductor's advanced Power Trench® process, which provides high reliability and low power consumption. It is suitable for applications such as synchronous rectifiers and load switches.

FDS86540 N-Channel PowerTrench® MOSFET is a MOSFET from FAIRCHILD, which has high performance trench technology, extremely low rDS(on), high power and current handling capability, and is widely used in surface mount packages.

FDS8690 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. Its rated voltage is 30V and its rated current is 14A. Its maximum on-resistance is 7.6mΩ. This MOSFET uses high-performance trench technology, which provides extremely low on-resistance and fast switching speed. It also has extremely low gate charge, high power and current handling capability, and has been 100% RG tested and complies with RoHS standards.

FDS8813NZ is an N-Channel PowerTrench® MOSFET with a drain-to-source voltage of 30V, a drain current of 18.5A, and a maximum on-state resistance of 4.5mΩ. This device is produced using Fairchild Semiconductor's advanced PowerTrench® process and is well suited for power management and load switching applications such as notebook computers and portable battery packs.

FDS8817NZ N-Channel PowerTrench® MOSFET is an N-channel MOSFET produced by Fairchild Semiconductor. It has a maximum rDS(on) of 7mΩ at VGS = 10V, ID = 15A. This device has extremely low rDS(on), high power and current handling capability, and complies with RoHS standards.

The FDS8840NZ is an N-channel power trench MOSFET with features including a maximum rDS(on) of 4.5 mΩ, a maximum rDS(on) of 6.0 mΩ, and HBM ESD protection.

NUP4103FC is a quad ESD array device released by Semiconductor Components Industries, LLC. It has an ultra-small flip chip packaging and a high anti-ESD capability, suitable for scenarios where board space is a premium.

The NUP2201MR6 is a low capacitance TSOP-6 diode TVS array for protection of high speed data lines.

This document introduces a dual common anode zener diode for providing transient overvoltage protection capability. The product is intended for use in applications requiring voltage and ESD sensitive equipment, such as computers, printers, business machines, communication systems, medical equipment, etc. Its dual junction common anode design can protect four separate lines using only one package. The product is ideal for situations where board space is limited.

NUP1105L is an Onsemi single line LIN/CAN bus protector, which is packaged in SOT-23. It provides bidirectional protection for the data line, offering a low cost option for system designers to improve system reliability and meet stringent EMI requirements.