FDS6930A is a Fairchild Semiconductor N-Channel Logic Level MOSFET produced using the PowerTrench process, which has low on-resistance and superior switching performance. The device is suitable for low-voltage and battery-powered applications where low line loss and fast switching are required.
This document is a technical datasheet for the Fairchild Semiconductor FDS6930A, a Dual N-Channel Logic Level PowerTrench™ MOSFET. The device utilizes advanced PowerTrench process technology to minimize on-state resistance while maintaining superior switching performance.
The FDS6930A is designed for low voltage and battery-powered applications requiring low in-line power loss and fast switching speeds. Key features include a 5.5 A continuous drain current, 30 V breakdown voltage, and extremely low gate charge (typical 5 nC).
| Drain-Source Voltage (VDS) | 30 V |
|---|---|
| Gate-Source Voltage (VGS) | 420 Vv |
| Continuous Drain Current (ID) | 5.5 A |
| Pulsed Drain Current (ID) | 20 A |
| Power Dissipation (Dual) | 2 W |
| Operating Temperature Range | -55 to 150 °C |
| Thermal Resistance (Junction-to-Ambient) | 78 °C/W |
The typical gate charge is 5 nC.
Yes, these devices are well suited for low voltage and battery powered applications.