The FDS6898AZ is a dual N-channel logic level PWM optimized PowerTrench MOSFET manufactured by Fairchild Semiconductor Corporation. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This document is a technical datasheet for the Fairchild Semiconductor FDS6898AZ, a dual N-Channel Logic Level MOSFET. The device utilizes the advanced PowerTrench process to minimize on-state resistance while maintaining superior switching performance, making it suitable for low voltage and battery-powered applications requiring fast switching.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Pulsed Drain Current | 38 A |
| Power Dissipation (Dual) | 2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
The FDS6898AZ contains dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETs.
The device supports a continuous drain current of 9.4 A under specified conditions.
The absolute maximum power dissipation for dual operation is 2 W.