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The FDV301N is a low-voltage logic level enhancement mode field effect transistor from Fairchild that is used as a replacement for digital transistors. The device is manufactured using a proprietary, high-density DMOS process that results in a very low on-state resistance. The device does not require bias resistors, making it a suitable replacement for multiple digital transistors with different bias resistor values.
The FDT86256 N-Channel PowerTrench® MOSFET is a high-performance MOSFET product with low rDS(on), fast switching speed, RoHS compliance and other features. It is suitable for DC-DC conversion, inverter, synchronous rectifier and other applications.
FDT86246 N-Channel Power Trench® MOSFET is a high-performance, low-resistance, high-power and high-current handling capability N-channel MOSFET. It is produced using Fairchild Semiconductor's advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
FDT86244 N-Channel Power Trench® MOSFET is produced by Fairchild Semiconductor and has extremely low rDS(on), high power and current handling capability. It can be widely used in load switch and primary switch applications.
This document describes the features and characteristics of the FDT86113LZ N-Channel PowerTrench® MOSFET, including the maximum on-state resistance, high-performance trench technology, high power and current handling capability, and ESD protection level.
FDT86106LZ N-Channel PowerTrench® MOSFET is a N-Channel logic Level MOSFET produced by Fairchild Semiconductor Corporation. It uses the company's advanced Power Trench® process to minimize on-state resistance while maintaining superior switching performance. The device has a continuous current of 3.2 A and a drain-source voltage of 100 V, making it ideal for applications such as DC-DC conversion.
The FDT86102LZ is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor. It has a maximum rDS(on) of 28 mΩ, a maximum HBM ESD protection voltage of 6 kV, very low Qg and Qgd, fast switching speed, and has been through 100% UIL testing and is RoHS compliant.
This document describes the features and absolute maximum ratings of the FDT459N N-Channel Enhancement Mode Field Effect Transistor released in March 1998. The transistor is produced using Fairchild's high cell density DMOS technology, which provides extremely low on-state resistance and superior switching performance. It is well-suited for low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control.
FDT458P is a 30V P-Channel PowerTrench MOSFET that is designed for use in DC/DC converters, battery chargers and motor drives. It features fast switching and low gate charge.
This product is a N-channel enhancement mode power field effect transistor, which features extremely low RDS(ON), high power and current handling capability, widely used in low voltage, low current applications such as notebook computer power management, battery powered circuits and DC motor control.
The FDT434P is a P-channel 2.5V specified PowerTrench MOSFET with superior switching performance, produced using Fairchild Semiconductor's advanced PowerTrench process specifically tailored to minimize on-state resistance and yet maintain low gate charge.
The FDT3612 is a 100V N-channel MOSFET that utilizes high performance trench technology to achieve extremely low RDS(ON). This results in a MOSFET that has fast switching speed and low gate charge, making it ideal for use in DC/DC converters and motor driving applications.
This document describes the features and characteristics of the FDS9958 Dual P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low gate charge, and suitability for portable electronics applications.
