FDS6910 is a dual N-channel logic level PowerTrench MOSFET produced by Fairchild Semiconductor using an advanced PowerTrench process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This document is a datasheet for the Fairchild Semiconductor FDS6910, a dual N-channel logic level MOSFET designed for low voltage and battery-powered applications. The device utilizes the PowerTrench process to achieve low on-state resistance and fast switching speeds.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal characteristics, and typical performance curves. Key specifications include a drain-source voltage of 30V, a continuous drain current of 7.5A, and a static drain-source on-resistance of 13 mΩ at VGS = 10V.
| Drain-Source Voltage | 30 V |
|---|---|
| Pulsed Drain Current | 20 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| Static Drain-Source On-Resistance | 13 mΩ |
| Gate Threshold Voltage | 1 to 3 V |
| Input Capacitance | 1130 pF |
The maximum continuous drain current is 7.5 A.
The static drain-source on-resistance is 13 mΩ at VGS = 10V and ID = 7.5A.
The operating and storage junction temperature range is -55 to +150 °C.