The FDS6930B is a dual N-channel logic level power MOSFET with a rating of 5.5A, 30V. It features fast switching speed, low gate charge, and high performance trench technology.
This document is a datasheet for the Fairchild Semiconductor FDS6930B, a dual N-channel logic level PowerTrench MOSFET. It is designed for low voltage and battery-powered applications, featuring low on-resistance, fast switching speed, and low gate charge. The device utilizes advanced PowerTrench technology to minimize on-state resistance while maintaining superior switching performance.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | ± 20 V |
| On-Resistance @ 10V | 38 mΩ |
| Operating Temperature Range | -55 to 150 °C |
The maximum continuous drain current is 5.5 A for dual operation.
The on-resistance is 38 mΩ when VGS is 10 V.
The device operates from -55°C to 150°C.