FJX1182 is a low frequency power amplifier produced by Fairchild Semiconductor Corporation. Its maximum collector-base voltage is -35V, maximum collector-emitter voltage is -30V, maximum emitter-base voltage is -5V, maximum collector current is -500mA, maximum collector power dissipation is 150mW, and maximum junction temperature is 150°C. The storage temperature range is -55~150°C.
The document describes the FJX1182 as a PNP epitaxial silicon transistor designed as a low frequency power amplifier. It is housed in an SOT-323 package and features a collector-emitter voltage rating of -30V and a maximum collector current of -500mA.
| Collector-Base Voltage (Vocpo) | -35 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | -30 V |
| Emitter-Base Voltage (VeBo) | 5 V |
| Collector Current (lo) | -500 mA |
| Collector Power Dissipation (Po) | 150 mW |
| Junction Temperature (Ty) | 150 °C |
The DC current gain ranges from 70 to 240 under specific test conditions.
The current gain bandwidth product is 200 MHz at a collector current of -20mA.