FJT44 is a high voltage NPN type transistor. Its features are: 1. Collector-Emitter voltage range is 400V. 2. Collector-Emitter current range is 300mA. 3. Working temperature range is -55 to +150°C.
This document is a technical datasheet for the Fairchild Semiconductor FJT44, an NPN epitaxial silicon transistor designed as a high-voltage device. It provides absolute maximum ratings, thermal characteristics, and ordering information for various package configurations.
The datasheet includes detailed electrical specifications such as breakdown voltages, cutoff currents, DC current gain, and saturation voltages under specific test conditions. Additionally, it presents typical performance characteristics through graphs covering switching times, capacitance, and frequency response.
| Collector-Base Voltage (VcBo) | 500 V |
|---|---|
| Collector-Emitter Voltage (VcEO) | 400 V |
| Emitter-Base Voltage (VeBo) | 6 V |
| Collector Current (Io) | 300 mA |
| Collector Dissipation (Tg = 25 °C) | 2 W |
| Junction Temperature (Ty) | 150 °C |
| Storage Temperature Range | -58 to +150 °C |
The maximum collector current (Io) is rated at 300 mA.
Yes, it is a High Voltage Transistor with a collector-base breakdown voltage of 500 V.