FJV42 is a NPN high voltage transistor produced by Fairchild Semiconductor Corporation. Its maximum collector-emitter voltage is 350V, maximum collector-emitter current is 500mA, maximum collector-base current is 100uA, maximum emitter-base voltage is 6V, and maximum collector power dissipation is 350mW.
The document details the FJV42 NPN high voltage transistor, an electronic component designed for high voltage applications. It specifies absolute maximum ratings, including a collector-emitter voltage of 350V and a collector current of 500mA. The device operates within a storage temperature range of -55°C to 150°C.
| Collector Power Dissipation | 350 mW |
|---|
The maximum collector current is 500 mA.
The maximum collector-emitter voltage is 350 V.
The thermal resistance from junction to ambient is 357 °C/W.