Fairchild Semiconductor FFB5551 Dual-Chip NPN General Purpose Amplifier Datasheet

This is the datasheet of FFB5551


Fairchild Semiconductor FFB5551 Dual-Chip NPN General Purpose Amplifier Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
113 KB
Published
12 July, 2012
Updated
01 October, 2023
MD5 checksum
A56311F193D495926B58310469F11A70

About this manual

The FFB5551 is a dual-chip NPN general-purpose amplifier designed for high-voltage applications. The device features a collector-emitter voltage rating of 160V and a collector-base voltage rating of 180V. It is housed in an SC70-6 package and operates within a junction temperature range of -55°C to 150°C.

What's inside

  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Thermal Characteristics
  • Typical Characteristics
  • Package Dimensions
  • Tradeemarks
  • Disclaimer
  • Life Support Policy

Specifications

Collector-Emitter Voltage160 V
Collector-Base Voltage180 V
Emitter-Base Voltage6.0 V
Collector Current - Continuous200 mA
Operating and Storage Junction Temperature Range-55 ~ 150 °C
Total Device Dissipation200 mW
Thermal Resistance, Junction to Ambient625 °C/W

Frequently asked questions

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is 160 V.

What is the operating temperature range?

The operating and storage junction temperature range is -55°C to 150°C.

What is the maximum collector current?

The continuous collector current is 200 mA.

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