This document describes the absolute maximum ratings and electrical characteristics of the FJV1845 NPN epitaxial silicon transistor. The transistor has a collector-base voltage and collector-emitter voltage of up to 120V, and a maximum collector current of 50mA. Additionally, the transistor features high gain and low saturation voltage.
This document provides technical specifications for the Fairchild Semiconductor FJV1845, an NPN epitaxial silicon transistor. It serves as a reference guide for product development and design, listing key parameters such as collector voltage, current limits, and temperature ranges.
The datasheet includes detailed electrical characteristics with test conditions, typical performance graphs illustrating static and dynamic behaviors, and package dimensions for the SOT-23 form factor.
| Collector-Base Voltage (Vocp) | 120 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | 120 V |
| Emitter-Base Voltage (VeBo) | 5 v |
| Collector Current (Io) | 50 mA |
| Base Current (Ip) | 10 mA |
| Junction Temperature (Ty) | 150 °C |
| Storage Temperature (Tsta) | -55 ~ 150 °C |
The maximum collector-emitter voltage is 120 V.
The maximum collector dissipation is 300 mW.