FJX2222A — NPN Epitaxial Silicon Transistor is a 600 mA NPN Epitaxial Silicon Transistor manufactured by Fairchild Semiconductor. It has a maximum collector-emitter voltage of 40V and a maximum collector power dissipation of 325 mW.
This document provides the design specifications for the FJX2222A, a general-purpose NPN epitaxial silicon transistor. It lists key features such as a collector-emitter voltage of 40V and a maximum collector power dissipation of 325mW. The device is available in the SOT-323 package.
| Collector-Emitter Voltage | 40V |
|---|---|
| Collector Power Dissipation | 325mW |
| Collector-Base Voltage | 75V |
| Emitter-Base Voltage | 6V |
| Collector Current | 600 mA |
| Junction Temperature | 150 °C |
| Package Type | SOT-323 |
The maximum collector current is 600 mA.
The maximum junction temperature is 150 °C.
The current gain bandwidth product is 300 MHz.