NZT660/NZT660A is a PNP low saturation transistor produced by Fairchild Semiconductor Corporation. This transistor has a collector current of up to 3A and features high current gain and low saturation voltage.
The document provides absolute maximum ratings and electrical characteristics for the NZT660 and NZT660A devices. Key parameters include a collector current up to 3A continuous, a collector-emitter voltage of 60V, and low saturation voltages under specific test conditions.
| Collector-Emitter Voltage (VCEO) | 60 V |
|---|---|
| Collector Current - Continuous | 3 A |
| Operating Junction Temperature Range | -55 ~ +150 °C |
| Total Device Dissipation (Pd) | 2 W |
The devices are designed to handle up to 3A of continuous collector current.
The operating and storage junction temperature ranges from -55°C to +150°C.
The total device dissipation is rated at 2 W.