FQP17P06 is a P-channel MOSFET with 60V breakdown voltage, produced using Fairchild's proprietary planar stripe DMOS technology. It has the advantages of low on-state resistance, fast switching and high energy pulse withstand. It is suitable for low voltage applications such as automotive, DC/DC converters
This document is a datasheet for the Fairchild FQP17P06, a P-Channel enhancement mode power field effect transistor. The device utilizes Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching for power management in portable products.
| Drain-Source Voltage | -60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 17 A |
| Maximum Junction Temperature | 175°C |
| On-Resistance | 0.122 Ω |
The maximum continuous drain current at 25°C is 17 A.
The maximum junction temperature rating is 175°C.
Yes, the device is 100% avalanche tested.