The document introduces the features and characteristics of the QFET product
This document is a datasheet for the Fairchild Semiconductor FQP19N20, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters, and motor control applications.
| Drain-Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 19.4 A |
| On-Resistance | 0.152 Ω |
| Power Dissipation (Tc = 25°C) | 140 W |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The maximum continuous drain current at 25°C is 19.4 A.
The typical on-state resistance is 0.152 Ω at Vgs = 10 V.
Yes, the device is 100% avalanche tested.