Fairchild Manuals

FDME1023PZT Dual P-Channel PowerTrench® MOSFET is a -20 V, -2.6 A, 142 mΩ power switch with low on-state resistance and low power consumption.

FDME1024NZT Dual N-Channel PowerTrench® MOSFET is a dual N-channel power MOSFET with 20 V, 3.8 A, 66 mΩ features. It is low power and suitable for mobile applications.

This document describes the features and characteristics of FDME1034CZT Complementary PowerTrench® MOSFET, including the maximum on-state resistance of the N-channel and P-channel, low profile design, halogen-free and antimony oxide-free, HBM ESD protection, etc.

This document describes the features and characteristics of FDME510PZT P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low profile, halogen-free and antimony oxide-free, and HBM ESD protection.

This document describes the features and characteristics of FDME820NZT N-Channel PowerTrench® MOSFET, including maximum on-resistance, low profile, halogen-free and antimony oxide-free, HBM ESD protection level, etc.

This document describes the features and characteristics of FDME905PT P-Channel PowerTrench® MOSFET, including maximum on-state resistance, low resistance MOSFET, micro package, and RoHS compliance.

The FDME910PZT P-Channel PowerTrench® MOSFET is a low RDS(on), low profile MOSFET that is suitable for battery charging or load switching applications.

FDML7610S is a dual N-channel power MOSFET from Fairchild Semiconductor Corporation, with a rated working voltage of 30V and a rated current of 30A. The maximum on-resistance is 7.5mΩ.

FDMQ8203 is a dual N-channel and dual P-channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. It has 100V, 6A, 110mΩ of N-channel and -80V, -6A, 190mΩ of P-channel.

FDMQ8403 is a N-channel power MOSFET from Fairchild Semiconductor Corporation. It has a rated voltage of 100V and a rated current of 6A. Its maximum on-resistance is 110mΩ.

This document describes the maximum ratings, thermal characteristics, and features of the FDMS015N04B N-Channel PowerTrench® MOSFET. The product features low RDS(on) and high efficiency, and utilizes advanced packaging and silicon material combination. It is suitable for applications such as synchronous rectification for server/telecom PSU, battery charger and battery protection circuit, DC motor drives, and uninterruptible power supplies.

The FDMS0312S N-Channel PowerTrench® SyncFETTM is a 30 V, 42 A, 4.9 mΩ N-channel power transistor from Fairchild Semiconductor Corporation. This product uses an advanced package and silicon technology combination to offer the lowest rDS(on) while maintaining excellent switching performance. This product also has the added benefit of an efficient monolithic Schottky body diode, MSL1 robust package design, 100% UIL tested, and RoHS compliant.

FDMS039N08B N-Channel PowerTrench® MOSFET is a low RDS(on), low FOM, low reverse recovery charge N-channel MOSFET, suitable for synchronous rectification, battery charger, motor drive and other applications

FDMS2504SDC is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench® process. It offers extremely low rDS(on) and excellent switching performance, with the added benefit of an efficient monolithic Schottky body diode.