This document describes the FQP20N06 60V N-Channel MOSFET, which is manufactured using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild Semiconductor FQP20N06, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high-efficiency switching for portable products.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, typical characteristics graphs, and thermal data. Key specifications include a drain-source voltage of 60V, a continuous drain current of 20A, and a maximum junction temperature of 175°C. The document also details package dimensions for the TO-220 package and includes test circuit diagrams.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 20 A |
| Maximum Junction Temperature | 175°C |
| On-Resistance | 0.062 @Vgs = 10 V |
| Package Type | TO-220 |
| Total Gate Charge | Typical 11.5 nC |
The maximum junction temperature rating is 175°C.
The continuous drain current is 20 A at a junction temperature of 25°C.
Yes, the device is 100% avalanche tested.