This document introduces the product characteristics of the QFET QFET QFET QFET series, including product overview, functional characteristics, application scenarios, etc.
The document describes the Fairchild FQP27N25, an N-Channel enhancement mode power MOSFET produced using proprietary planar stripe DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for high efficiency DC/DC converters and switch-mode power supplies.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 26.5 A |
| Continuous Drain Current (Tc = 100°C) | 16.2 A |
| Pulsed Drain Current | 102 A |
| Gate Threshold Voltage | 3.0 - 5.0 V |
| Static Drain-Source On-Resistance | 0.11 Ω (Typ) |
| Power Dissipation (Tc = 25°C) | 180 W |