This document describes the FQP20N06L 60V logic N-channel MOSFET product. The product is manufactured using Fairchild's proprietary technology, featuring low on-state resistance, superior switching performance, and durability under high energy pulses. It is suitable for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a technical datasheet for the Fairchild Semiconductor FQP20N06L, a 60V Logic N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance.
The datasheet details absolute maximum ratings, electrical characteristics, typical operating curves, and package dimensions for the TO-220 package. It is intended for low voltage applications such as automotive systems, DC/DC converters, and power management in portable products.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 21 A |
| On-Resistance | 0.055 Ohms @ Vgs = 10V |
| Gate Charge (Typical) | 9.5 nC |
| Reverse Transfer Capacitance | 35 pF |
| Maximum Junction Temperature | 175°C |
The maximum junction temperature rating is 175°C.