FQD2N80 / FQU2N80 is an 800V N-channel MOSFET produced by Fairchild. It has low on-state resistance, high frequency switching, 100% avalanche testing and other features.
The document describes the Fairchild FQD2N80 and FQU2N80, which are 800V N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high efficiency switch mode power supply applications. This manual is written in Chinese.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (25°C) | 1.8 A |
| On-Resistance | 6.3 Ω |
| Gate Charge (Typical) | 12 nC |
| Reverse Transfer Capacitance | 5.5 pF |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 1.8 A when the case temperature is 25°C.
The maximum drain-source breakdown voltage is 800 V.
The maximum power dissipation is 50 W when mounted on the minimum pad size recommended.